Publication
論文
- Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model
Hayato Watanabe, Dingding Wang, Takashi Fujii, Toshiyuki Iwamoto, Tsuguo Fukuda, Momoko Deura, Tsutomu Araki
physica status solidi (b) 2024 - Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy
Yuta Kubo, Momoko Deura, Yasuhiro Yamada, Takashi Fujii, Tsutomu Araki
physica status solidi (b) 2024 - Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy
Momoko Deura, Yuichi Wada, Takashi Fujii, Tsutomu Araki
physica status solidi (b) 2024 - GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates
Momoko Deura, Naoya Mokutani, Yuichi Wada, Hideto Miyake, Tsutomu Araki
Journal of Applied Physics 2024 - Theoretical study on gas‐phase reactions during chemical vapor deposition of TixAl1–xN from TiCl4, AlCl3, and NH3
Noboru Sato, Jun Yamaguchi, Masahiro Koto, Hayato Kubo, Takanori Sugiyama, Takahito Tanibuchi, Momoko Deura, Takeshi Momose, Yukihiro Shimogaki
International Journal of Chemical Kinetics 2024 - Mechanism of SiC formation by Si surface carbonization using CO gas
Momoko Deura, Yutaka Ohno, Ichiro Yonenaga, Hiroyuki Fukuyama
Applied Surface Science 159965-159965 2024 - Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates
Naoya Mokutani, Momoko Deura, Shinichiro Mouri, Kanako Shojiki, Shiyu Xiao, Hideto Miyake, Tsutomu Araki
physica status solidi (b) 2023 - Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates
Momoko Deura, Takuya Nakahara, Wan Chi Lee, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki
Journal of Applied Physics 133(16) 2023 - Direct growth of GaN film on ScAlMgO
4 substrate by radio-frequency plasma-excited molecular beam epitaxy
Tsutomu Araki, Seiya Kayamoto, Yuuichi Wada, Yuuya Kuroda, Daiki Nakayama, Naoki Goto, Momoko Deura, Shinichiro Mouri, Takashi Fujii, Tsuguo Fukuda …
Applied Physics Express 16(2) 2023 - Supercritical fluid deposition for conformal Cu film formation on sub-millimeter-scale structures used to fabricate terahertz waveguides
Yuyuan Huang, Momoko Deura, Yusuke Shimoyama, Yukihiro Shimogaki, Takeshi Momose
Applied Physics Express 15(7) 075502 2022 - Suitability of metallic materials for constructing metal-coated dielectric terahertz waveguides
Yuyuan Huang, Kuniaki Konishi, Momoko Deura, Yusuke Shimoyama, Junji Yumoto, Makoto Kuwata-Gonokami, Yukihiro Shimogaki, Takeshi Momose
Journal of Applied Physics 131(10) 105106-105106 2022 - On-chip optical interconnection using integrated germanium light emitters and photodetectors
Kazuki Tani, Tadashi Okumura, Katsuya Oda, Momoko Deura, Tatemi Ido
Optics Express 29(18) 28021-28021 2021 - Development of a model for evaluating propagation loss of metal-coated dielectric terahertz waveguides
Yuyuan Huang, Kuniaki Konishi, Momoko Deura, Yusuke Shimoyama, Junji Yumoto, Makoto Kuwata-Gonokami, Yukihiro Shimogaki, Takeshi Momose
Journal of Applied Physics 130(5) 055104-055104 2021 - Enhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor
Kazuki Tani, Katsuya Oda, Momoko Deura, Tatemi Ido
Optics Express 29(3) 3584-3584 2021 - Kinetic analysis of face-centered-cubic TiAlN film deposition by chemical vapor deposition
Momoko Deura, Hiroki Sato, Jun Yamaguchi, Tomoko Hirabaru, Hayato Kubo, Takeshi Momose, Takahito Tanibuchi, Yukihiro Shimogaki
Materials Science and Engineering B 264 114992-114992 2021 - Strain control of GaN grown on Si substrates using an AlGaN interlayer
Momoko Deura, Takuya Nakahara, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki
Journal of Crystal Growth 514 65-69 2019 - Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family
I. Yonenaga, M. Deura, Y. Tokumoto, K. Kutsukake, Y. Ohno
Journal of Crystal Growth 500 23-28 2018 - Characterization of femtosecond-laser-induced periodic structures on SiC substrates
R. Miyagawa, Y. Ohno, M. Deura, I. Yonenaga, O. Eryu
Japanese Journal of Applied Physics 57 2018 - Mechanical properties of cubic-BN(111) bulk single crystal evaluated by nanoindentation
M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
Physica Status Solidi B 255 1700473/1-1700473/4 2018 - Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai …
Journal of Microscopy 268(3) 230-238 2017 - Nanoindentation measurements of a highly oriented wurtzite-type boron nitride bulk crystal
Deura Momoko, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro, Taniguchi Takashi
Jpn. J. Appl. Phys. 56(3) 030301/1-030301/4 2017 - Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon
Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Naoki Ebisawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai …
Applied Physics Letters 110(6) 062105-062105 2017 - Synthesis of highly-oriented wurtzite-type BN crystal and evaluation of its mechanical properties using nanoindentation
M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
Japanese Journal of Applied Physics Rapid Communications 56(3) 030301/1-030301/4 2017 - Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals
Yutaka Ohno, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Yasuo Shimizu, Naoki Ebisawa, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda
Applied Physics Letters 109(14) 142105-142105 2016 - Formation of SiC layer by carbonization of Si surface using CO gas
Momoko Deura, Hiroyuki Fukuyama
Journal of Crystal Growth 434 77-80 2016 - Characterization of silicon ingots: Mono-like versus high-performance multicrystalline
Kentaro Kutsukake, Momoko Deura, Yutaka Ohno, Ichiro Yonenaga
Japanese Journal of Applied Physics 54(8S1) 08KD10-08KD10 2015 - Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides
Ichiro Yonenaga, Yasushi Ohkubo, Momoko Deura, Kentaro Kutsukake, Yuki Tokumoto, Yutaka Ohno, Akihiko Yoshikawa, Xin Qiang Wang
AIP Advances 5(7) 077131-077131 2015 - Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si
Yutaka Ohno, Kaihei Inoue, Kentaro Kutsukake, Momoko Deura, Takayuki Ohsawa, Ichiro Yonenaga, Hideto Yoshida, Seiji Takeda, Ryo Taniguchi, Hideki Otubo …
Physical Review B 91(23) 235315 2015 - Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals
Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Momoko Deura, Kentaro Kutsukake, Ichiro Yonenaga, Yasuo Shimizu, Koji Inoue, Naoki Ebisawa, Yasuyoshi Nagai
Applied Physics Letters 106(25) 251603 2015 - Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy
S. S. Han, A. Higo, W. Yunpeng, M. Deura, M. Sugiyama, Y. Nakano, S. Panyakeow, S. Ratanathammaphan
Microelectronic Engineering 112 143-148 2013 - Highly stable GaN photocatalyst for producing H2 gas from water
Kazuhiro Ohkawa, Wataru Ohara, Daisuke Uchida, Momoko Deura
Japanese Journal of Applied Physics 52(8) 08JH04 2013 - Investigation of Growth Mechanism for InGaN by Metal-Organic Vapor Phase Epitaxy Using Computational Fluid Simulation
Momoko Deura, Fumitaka Ichinohe, Yu Arai, Kenichi Shiohama, Akira Hirako, Kazuhiro Ohkawa
Japanese Journal of Applied Physics 52(8) 08JB13 2013 - Highly efficient photochemical HCOOH production from CO2 and water using an inorganic system
Satoshi Yotsuhashi, Hiroshi Hashiba, Masahiro Deguchi, Yuji Zenitani, Reiko Hinogami, Yuka Yamada, Momoko Deura, Kazuhiro Ohkawa
AIP Advances 2(4) 042160 2012 - High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water
Tomoe Hayashi, Momoko Deura, Kazuhiro Ohkawa
Japanese Journal of Applied Physics 51(11) 112601 2012 - The effect of thin GaP insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys
Soe Soe Han, Somsak Panyakeow, Somchai Ratanathammaphan, Akio Higo, Wang Yunpeng, Momoko Deura, Masakasu Sugiyama, Yoshiaki Nakano
Canadian Journal of Chemical Engineering 90(4) 915-918 2012 - 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
Kazuhiro Ohkawa, Tomomasa Watanabe, Masanori Sakamoto, Akira Iiirako, Momoko Deura
Journal of Crystal Growth 343(1) 13-16 2012 - Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors
Noriyuki Miyata, Hiroyuki Ishii, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama …
Microelectronic Engineering 88(12) 3459-3461 2011 - High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy
Momoko Deura, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yukihiro Shimogaki, Yoshiaki Nakano, Masakazu Sugiyama
Japanese Journal of Applied Physics 50(4) 04DH07 2011 - In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells
Yunpeng Wang, Ryusuke Onitsuka, Momoko Deura, Wen Yu, Masakazu Sugiyama, Yoshiaki Nakano
Journal of Crystal Growth 312(8) 1364-1369 2010 - Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE
Momoko Deura, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama
Journal of Crystal Growth 312(8) 1353-1358 2010 - Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si
Yoshiyuki Kondo, Momoko Deura, Yuki Terada, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama
Journal of Crystal Growth 312(8) 1348-1352 2010 - Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal-Organic Vapor Phase Epitaxy
Yoshiyuki Kondo, Momoko Deura, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama
Japanese Journal of Applied Physics 49(12) 125601 2010 - High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
Hiroyuki Ishii, Noriyuki Miyata, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama …
Applied Physics Express 2(12) 121201 2009 - Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
Momoko Deura, Takuya Hoshii, Takahisa Yamamoto, Yuichi Ikuhara, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama
Applied Physics Express 2(1) 011101 2009 - In situ passivation of GaAs surface with aluminum oxide with MOVPE
Yuki Terada, Momoko Deura, Yukihiro Shimogaki, Masakazu Sugiyama, Yoshiaki Nakano
Journal of Crystal Growth 310(23) 4808-4812 2008 - Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si
Momoko Deura, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama
Journal of Crystal Growth 310(23) 4768-4771 2008 - Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS
Momoko Deura, Yukihiro Shimogaki, Yoshiaki Nakano, Masakazu Sugiyama
Journal of Crystal Growth 310(23) 4736-4740 2008 - Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas
Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi
Physica Status Solidi C 5(9) 2733-+ 2008 - Kinetic analysis of surface adsorption layer in GaAs(001) metalorganic vapor phase epitaxy by in situ reflectance anisotropy spectroscopy
Momoko Deura, Masakazu Sugiyama, Takayuki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki
Japanese Journal of Applied Physics 46(10A) 6519-6524 2007 - Impact of atomistic surface structure on macroscopic surface reaction rate in MOVPE of GaAs
Masakazu Sugiyama, Haizheng Song, Momoko Deura, Yoshiaki Nakano, Yukihiro Shimogaki
Electrochemical and Solid State Letters 10(4) H123-H126 2007